<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>0864-084X</journal-id>
<journal-title><![CDATA[Nucleus]]></journal-title>
<abbrev-journal-title><![CDATA[Nucleus]]></abbrev-journal-title>
<issn>0864-084X</issn>
<publisher>
<publisher-name><![CDATA[CUBAENERGIA]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S0864-084X2018000200004</article-id>
<title-group>
<article-title xml:lang="en"><![CDATA[Analysis of radiation effects on some properties of GaAs:Cr and Si sensors exposed to a 22 MeV electron beam]]></article-title>
<article-title xml:lang="es"><![CDATA[Análisis de los efectos de la radiación en algunas propiedades de sensores de GaAs:Cr y Si expuestos a un haz de electrones de 22 MeV.]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Torres]]></surname>
<given-names><![CDATA[A. G.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Leyva]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
<xref ref-type="aff" rid="Aaf"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Zhemchugov]]></surname>
<given-names><![CDATA[A.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Kruchonak]]></surname>
<given-names><![CDATA[U.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[El-Azm]]></surname>
<given-names><![CDATA[S. Abou]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Ramos]]></surname>
<given-names><![CDATA[D.]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Instituto Superior de Tecnologías y Ciencias Aplicadas  ]]></institution>
<addr-line><![CDATA[ Havana]]></addr-line>
<country>Cuba</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,Centro de Aplicaciones Tecnológicas y Desarrollo Nuclear  ]]></institution>
<addr-line><![CDATA[ Havana]]></addr-line>
<country>Cuba</country>
</aff>
<aff id="Af3">
<institution><![CDATA[,Joint Institute for Nuclear Research (JINR)  ]]></institution>
<addr-line><![CDATA[ Dubna]]></addr-line>
<country>Russia</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>12</month>
<year>2018</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>12</month>
<year>2018</year>
</pub-date>
<numero>64</numero>
<fpage>4</fpage>
<lpage>9</lpage>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://scielo.sld.cu/scielo.php?script=sci_arttext&amp;pid=S0864-084X2018000200004&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://scielo.sld.cu/scielo.php?script=sci_abstract&amp;pid=S0864-084X2018000200004&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://scielo.sld.cu/scielo.php?script=sci_pdf&amp;pid=S0864-084X2018000200004&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="en"><p><![CDATA[Abstract Nowadays, the experiments related to High Energy Physics and others fields demand the use of detectors with greater radiation resistance, and the novel material GaAs:Cr has demonstrated excellent radiation hardness compared with other semiconductors. On the basis of evidence obtained in the JINR experiment with the use of 22 MeV electrons beam generated by the LINAC-800 accelerator, an analysis of electron radiation effects on GaAs:Cr and Si detectors is presented. The measured I-V characteristics showed a dark current increase with dose, and an asymmetry between the two branches of behaviors for all detectors. Analyzing the MIP spectra and CCE dose dependence measurements a deterioration process of detectors collection capacity with dose increase was found, although behaviors are somewhat different according to the detector type. The detailed explanation of these effects from the microscopic point of view appears in the text, and are generally linked to the generation of atomic displacement, vacancies and other radiation defects, modifying the energy levels structure of the target material. These changes affect the lifetime and concentration of the charge carriers, and other characteristics of the target material.]]></p></abstract>
<abstract abstract-type="short" xml:lang="es"><p><![CDATA[Resumen Actualmente, los experimentos relacionados con la física de altas energías y otros campos, demandan el uso de detectores con mayor resistencia a las radiaciones y el novedoso material GaAs:Cr ha demostrado poseer una excelente fortaleza comparado con otros semiconductores. En base a las evidencias obtenidas en el experimento del IUIN con el uso de un haz de electrones de 22 MeV generado por el acelerador LINAC-800, se presenta un análisis de los efectos de la radiación en detectores de Si y GaAs:Cr. Las características I-V medidas mostraron un incremento de la corriente de fuga con la dosis y una asimetría entre las dos ramas de estos comportamientos para todos los detectores. Analizando las mediciones de los espectros MIP y la dependencia de la CCE con la dosis, fue encontrado un proceso de deterioro de la capacidad de detección de los detectores con el aumento de la dosis, sin embargo, los comportamientos son diferentes de acuerdo al tipo de detector. La explicación detallada de estos efectos desde el punto de vista microscópico aparece en el texto, los cuales están relacionados generalmente con la generación de desplazamientos atómicos, vacancias y otros defectos producto de la radiación, modificando la estructura de los niveles energéticos en el material sensor. Estos cambios afectan el tiempo de vida y la concentración de los portadores de carga, así como otras características del material.]]></p></abstract>
<kwd-group>
<kwd lng="en"><![CDATA[chromium]]></kwd>
<kwd lng="en"><![CDATA[gallium arsenides]]></kwd>
<kwd lng="en"><![CDATA[physical radiation effects]]></kwd>
<kwd lng="en"><![CDATA[traps]]></kwd>
<kwd lng="en"><![CDATA[high energy physics]]></kwd>
<kwd lng="en"><![CDATA[radiation detectors]]></kwd>
<kwd lng="es"><![CDATA[cromo]]></kwd>
<kwd lng="es"><![CDATA[arseniuros de galio]]></kwd>
<kwd lng="es"><![CDATA[efectos físicos de las radiaciones]]></kwd>
<kwd lng="es"><![CDATA[trampas]]></kwd>
<kwd lng="es"><![CDATA[física de altas energías]]></kwd>
<kwd lng="es"><![CDATA[detectores de radiaciones]]></kwd>
</kwd-group>
</article-meta>
</front><back>
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