<?xml version="1.0" encoding="ISO-8859-1"?><article xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">
<front>
<journal-meta>
<journal-id>2304-0106</journal-id>
<journal-title><![CDATA[Anales de la Academia de Ciencias de Cuba]]></journal-title>
<abbrev-journal-title><![CDATA[Anales de la ACC]]></abbrev-journal-title>
<issn>2304-0106</issn>
<publisher>
<publisher-name><![CDATA[Academia de Ciencias de Cuba]]></publisher-name>
</publisher>
</journal-meta>
<article-meta>
<article-id>S2304-01062022000100009</article-id>
<title-group>
<article-title xml:lang="es"><![CDATA[Aportes en la obtención y estudio de películas delgadas de ZnO para su uso perspectivo en la optoelectrónica y la fotovoltaica]]></article-title>
<article-title xml:lang="en"><![CDATA[Contributions to obtaining and studying thin films of ZnO for their prospective use in optoelectronics and photovoltaics]]></article-title>
</title-group>
<contrib-group>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Iribarren Alfonso]]></surname>
<given-names><![CDATA[Augusto Andrés]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Castro Rodríguez]]></surname>
<given-names><![CDATA[Román Ernesto]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Martín Tovar]]></surname>
<given-names><![CDATA[Enrique Adrian]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Chan y Díaz]]></surname>
<given-names><![CDATA[Enrique]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
<contrib contrib-type="author">
<name>
<surname><![CDATA[Daza Casiano]]></surname>
<given-names><![CDATA[Luis Germán]]></given-names>
</name>
<xref ref-type="aff" rid="Aff"/>
</contrib>
</contrib-group>
<aff id="Af1">
<institution><![CDATA[,Universidad de La Habana Instituto de Ciencia y Tecnología de Materiales ]]></institution>
<addr-line><![CDATA[ La Habana]]></addr-line>
<country>Cuba</country>
</aff>
<aff id="Af2">
<institution><![CDATA[,Centro de Investigación y Estudios Avanzados del Instituto Politécnico Nacional Departamento de Física Aplicada ]]></institution>
<addr-line><![CDATA[ Yucatán]]></addr-line>
<country>México</country>
</aff>
<aff id="Af3">
<institution><![CDATA[,Instituto Mexicano del Seguro Social Hospital de Especialidades del Centro Médico Nacional Ignacio García Téllez División de Oncología y Uronefrología, Unidad Médica de Alta Especialidad]]></institution>
<addr-line><![CDATA[Mérida Yucatán]]></addr-line>
<country>Mexico</country>
</aff>
<aff id="Af4">
<institution><![CDATA[,Tecnológico Nacional de México Departamento de Ingeniería Mecánica ]]></institution>
<addr-line><![CDATA[Mérida Yucatán]]></addr-line>
<country>México</country>
</aff>
<aff id="Af5">
<institution><![CDATA[,Universidad Tecnológica de Pereira  ]]></institution>
<addr-line><![CDATA[Risaraldas Caldas]]></addr-line>
<country>Colombia</country>
</aff>
<pub-date pub-type="pub">
<day>00</day>
<month>04</month>
<year>2022</year>
</pub-date>
<pub-date pub-type="epub">
<day>00</day>
<month>04</month>
<year>2022</year>
</pub-date>
<volume>12</volume>
<numero>1</numero>
<copyright-statement/>
<copyright-year/>
<self-uri xlink:href="http://scielo.sld.cu/scielo.php?script=sci_arttext&amp;pid=S2304-01062022000100009&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://scielo.sld.cu/scielo.php?script=sci_abstract&amp;pid=S2304-01062022000100009&amp;lng=en&amp;nrm=iso"></self-uri><self-uri xlink:href="http://scielo.sld.cu/scielo.php?script=sci_pdf&amp;pid=S2304-01062022000100009&amp;lng=en&amp;nrm=iso"></self-uri><abstract abstract-type="short" xml:lang="es"><p><![CDATA[RESUMEN  Introducción:  En el presente trabajo se agrupan resultados logrados en la obtención y caracterización de películas delgadas de ZnO dopadas y sin dopar y con cambios morfológicos a partir de los cuales se logran modificaciones químicas y de las propiedades ópticas, además de que se dilucidan comportamientos de la resistividad en películas de ZnO, con el objetivo de controlar de manera conveniente y reproducible propiedades útiles en su aplicación.  Métodos:  Películas de ZnO:Cd,Te y ZnO:N se obtuvieron por las técnicas de depósito por láser pulsado (PLD) con blanco inorgánico de ZnO+CdTe e híbrido de poli(etil 2-cianoacrilato)+ZnO respectivamente. Las películas de ZnO:Al fueron obtenidas combinando con la técnica de sustrato inclinado (OAD).  Resultados y discusión:  Las películas de ZnO: Cd, Te y ZnO: N poseen alta resistividad por pasivación de los defectos por incorporación de Cd, Te y N a la red del ZnO y, consecuentemente, la formación de compuestos de ZnO del tipo CdxZn1-xO1-yTey y ZnxOyNz. Las películas de ZnO:Al se obtuvieron con morfología nanocolumnar usando la técnica de rf-sputtering combinada con la de sustrato inclinado (OAD). Esto permitió hacer ingeniería de dispersión óptica para modificar el índice de refracción efectivo en hasta 20 % y el gap de energía en hasta 3 %, además de variar la resistividad. Se dilucidó la causa del comportamiento contradictorio de las propiedades eléctricas en películas ZnO crecidas por PLD con diferentes presiones parciales de oxígeno que se vinculó a la influencia significativa de configuraciones intersticiales de oxígeno y Zn intersticial y tensiones residuales que son relevantes en el comportamiento de la resistividad en películas delgadas crecidas por técnicas de alta energía.]]></p></abstract>
<abstract abstract-type="short" xml:lang="en"><p><![CDATA[ABSTRACT  Introduction: This paper presents results achieved in the obtaining and characterization of doped and undoped ZnO thin films with morphological changes, from which chemical and optical-property modifications are achieved; resistivity behavior is elucidated in ZnO films, aiming to control, in a convenient and reproducible manner, useful properties when utilizing it.  Methods: ZnO:Cd,Te and ZnO:N films were obtained by pulsed laser deposition (PLD) techniques with inorganic ZnO+CdTe and poly (ethyl 2-cyanoacrylate)+ZnO hybrid targets respectively. ZnO:Al films were obtained by combination with the inclined substrate technique (OAD).  Results and discussion: ZnO:Cd,Te and ZnO:N films have high resistivity because of passivation of defects due to the incorporation of Cd, Te and N into the ZnO network and, consequently, the formation of ZnO compounds of the type CdxZn1-xO1-yTey and ZnxOyNz. The ZnO:Al films were obtained with nanocolumnar morphology using the rf-sputtering technique combined with oblique angle deposition (OAD). This allowed for optical dispersion engineering to modify the effective refractive index by up to 20% and the energy gap by up to 3%, in addition to varying the resistivity. The cause of a contradictory behavior of the electrical properties in ZnO films grown by PLD and different partial oxygen pressure was elucidated, which was linked to the significant influence of interstitial oxygen configurations and interstitial Zn, and residual stresses that are relevant in the behavior of resistivity in thin films grown by high energy techniques.]]></p></abstract>
<kwd-group>
<kwd lng="es"><![CDATA[películas de ZnO]]></kwd>
<kwd lng="es"><![CDATA[impurificación de ZnO]]></kwd>
<kwd lng="es"><![CDATA[depósito con inclinación del sustrato (OAD)]]></kwd>
<kwd lng="es"><![CDATA[películas con morfología nanocolumnar]]></kwd>
<kwd lng="es"><![CDATA[propiedades físico-químicas]]></kwd>
<kwd lng="en"><![CDATA[ZnO films]]></kwd>
<kwd lng="en"><![CDATA[doped ZnO]]></kwd>
<kwd lng="en"><![CDATA[oblique angle deposition (OAD)]]></kwd>
<kwd lng="en"><![CDATA[nanocolumnar morphology films]]></kwd>
<kwd lng="en"><![CDATA[physico-chemical properties]]></kwd>
</kwd-group>
</article-meta>
</front><back>
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