Abstract

S. NAGY, Agnes  and  POLANCO RISQUET, Alicia. Physical effects in bipolar transistor: Modeling and parameters extraction. EAC [online]. 2015, vol.36, n.1, pp.31-41. ISSN 1815-5928.

The rising complexity of electronic systems, the reduction of components size with the new  technological nodes, and the increase of working frequencies, demand every time more accurate and stable integrated circuits, which require more precise simulation programs during the design process. The PSPICE, widely used to simulate the general behavior of integrated circuits, does not consider many of the physical effects that can be found in real devices. Compact models HICUM and MEXTRAM, have been developed over recent decades, in order to eliminate this deficiency.  This work presents some of the physical aspects that have not been studied so far, such as; the expression of base emitter voltage, including the emitter emission coefficient effect (n); physical explanation and modeling of emission coefficient, the effect of neutral capacitance in modeling of emitter capacitance, as well as a new extraction method for the diffusion potential V_DE (T), based on the forward biased base-emitter capacitance; showing excellent agreement between experimental and theoretical results.

Keywords : physical effects; emission coefficient; emitter capacitance; built-in voltage; bipolar transistors.

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